Innoscience capitalises on GaN on silicon to produce 650V GaN HEMTs
Low RDS(on) GaN HEMT devices by Innoscience are supplied in industry-standard packages and are very cost-competitive, said the company. The 650V E-mode INN650D080BS power transistors devices have an on-resistance of 80mOhm (60mOhm typical) in a standard 8×8 DFN package. According to Innoscience, they enable higher power applications, for example in totem pole LLC architectures or fast battery chargers.
Senior vice president of product development, Yi Sun, confirmed the progress of the company’s GaN on silicon (GaN-on-Si) technology: “We are now able to address high density, high efficiency power conversion applications. . . . these new parts are qualified to JEDEC standards for chip and package, and they have also passed DHSOL (dynamic high temperature operating life) reliability testing according to JEP180 and accelerated life tests up to 1000V give lifetime calculations of 36 years (520V; 150 degrees C; 0.01 per cent failure rate).”
Using Innoscience’s strain enhancement layer, the InnoGaN devices feature low specific RDS(on) as well as very low dynamic RDS(on) and excellent reliability, said the company. The 80mOhm RDS(on) parts also feature good drain source voltage transient (VDS, transient) and pulsed (VDS, pulsed) characteristics of 800V and 750V respectively. The new devices also have a strong ESD protection circuit embedded in the die, although this circuit has been modified to allow a larger negative gate voltage swing down to -6V.
The low RDS(on) INN650D080BS power transistors are available in industry-standard 8×8 DFN packages and join the existing portfolio of 140,190, 240, 350, 500 and 600mΩ RDS(on) parts.
Innoscience is an integrated device manufacturer (IDM) founded in December 2015 with investment from CMBI, ARM, SK and other investors. The company says its vision is to create an energy ecosystem with effective and inexpensive Gallium Nitride-on-Silicon (GaN-on-Si) power devices.
In November 2017, Innoscience established a mass production eight-inch wafer line for GaN-on-Si devices in Zhuhai, China. It opened a new facility in the Suzhou in September 2020. Its GaN power devices can be used in applications as diverse as cloud computing, electric vehicles (EV) and automotive, portable devices, mobile phones, chargers and adapters.
