Infineon introduces cooling variants for PQFN OptiMOS MOSFET family
To support the quest for improved performance and power density, Infineon Technologies has launched a Source-Down 3.3 x 3.3mm² PQFN product with bottom-side cooling (BSC) and dual-side cooling (DSC) variants.
The power MOSFETs are intended for DC/DC power conversion in server, telecomms, OR-ing, battery protection, power tools and charger applications.
For the Source-Down (SD) package, the MOSFET die source contact is flipped toward the footprint side of the package, which is then soldered to the PCB. There is also an improved clip design on top of the chip for the drain contact. Infineon claimed this results in market-leading chip-to-package area ratio.
When compared to best-in-class PQFN 3.3 x 3.3 m² Drain-Down devices, the new family significantly improves the on-resistance (RDS(on) by up to 35 per cent. Infineon’s OptiMOS Source-Down PQFN with DSC provides an enhanced thermal interface to redirect power losses from the switch towards the heatsink. DSC variants offer the most direct way to connect a power switch to a heatsink, said Infineon, increasing power dissipation capability by a factor of up to three compared to the corresponding BSC Source-Down variant.
Infineon offers two footprints. A traditional standard-gate variant provides a quick and easy modification of existing Drain-Down designs. And a Centre-Gate (CG) variant opens new possibilities for paralleling devices to keep the driver-to-gate connection as short as possible.
Continuous current capability is up to 298A.
The OptiMOS Source-Down PQFN 3.3 x 3.3 mm² 25 to 150 V product family in either footprint and Dual-Side Cooling package can be ordered now.
