Navitas makes GaNSense of integrating control
ICs for the strategic integration of high speed, high voltage GaN and low voltage silicon system controller chips enables easy to use, high efficiency and fast charging power systems, said Navitas Semiconductor. The Californian company has released the GaNSense Control IC family.
Navitas said it has developed an optimised, high speed, low voltage (LV) silicon system controller and integrated it into its high performance GaN ICs in what is claimed to be the industry’s first GaNSense control IC technology.
The initial range of GaNSense Control features high frequency, quasi-resonant (HFQR) flybacks supporting QR, DCM, CCM and multiple frequency, hybrid mode operations, with frequencies up to 225kHz. The ICs are provided in a single, surface mount QFN package (NV695x-series) or as a chip-set (NV9510x + NV61xx). On the secondary side, integrated synchronous rectifier (SR) power ICs (NV97xx) achieve maximum efficiency at any load condition compared to conventional rectifiers, reported Navitas.
The ICs have integrated features such as lossless current sensing, HV start up, frequency hopping, low standby power, and wide VDD input voltage to deliver small, efficient, cool running systems with fewer components and no Rsense hot-spot. They also include integrated 800V transient voltage, 2kV ESD, over-voltage, over-current and over-temperature protection.
Initial applications cover 20 to 150W including smartphone, tablet and laptop chargers, consumer and home appliances, point of sale and auxiliary supplies in high power data centre power and 400V EV systems.
Navitas COO/CTO and co-founder Dan Kinzer, said: “We’re starting with GaNSense Control for fast chargers and consumer appliances, as well as auxiliary supplies in servers and data centres. In the future, we can expand the portfolio to address higher power applications in renewable energy, energy storage, and electric vehicles”.
Navitas Semiconductor says it is the only pure play, next generation power emiconductor company. It was founded in 2014. GaNFast power ICs integrate GaN power and drive, with control, sensing, and protection to enable faster charging, higher power density, and greater energy savings. Complementary GeneSiC power devices are optimised high power, high voltage, and high reliability silicon carbide (SiC) solutions. Focus markets include EV, solar / energy storage, home appliance / industrial, data center, mobile and consumer.
