Infineon expands CoolGaN with in-house HD-GIT process
Infineon Technologies has integrated the CoolGaN 600V hybrid drain embedded gate injection transistor (HD-GIT) technology into its in-house manufacturing and this control of the supply chain means it can expand its GaN portfolio. New, discrete and integrated GaN devices exceed JEDEC lifetime requirements, said the company. They have been optimised for various applications ranging from industrial switch mode power supplies for servers, telecomms and solar to consumer applications, such as chargers and adapters, motor drives, TV / monitor and LED lighting systems.
The CoolGaN discrete and integrated power stage (IPS) devices comply with JEDEC standards (JESD47 and JESD22). The discrete CoolGaN GIT HEMT devices are available in DSO-20-85, DSO-20-87, HSOF-8-3, LSON-81-, and TSON-8 packages and in multiple on-state resistance (RDS(on), max) values ranging from 42 to 340 mOhm. The IPS devices are half bridge, integrating two GaN switches in a TIQFN-28 package with RDS(on) max values of 190 to 650 mOhm, or single-channel devices, in a thermally-enhanced TIQFN-21 package with RDS (on) max values in the range of 130 to 340 mOhm.
Infineon said its CoolGaN GIT technology combines a robust gate structure, internal electrostatic discharge (ESD) protection and “excellent dynamic RDS (on) performance”. It exploits the intrinsic properties of GaN to deliver “exceptional” figures of merit (FoM) compared to Si technology, including 10 times higher breakdown field, two times higher electron mobility, 10 times lower output charge, zero reverse recovery charge and 10 times lower gate charge with linear output capacitance (C OSS).
These technical features result in low RDS(on), improved efficiency in resonant circuits, the use of new topologies and current modulation, as well as fast and nearly lossless switching.
The range of CoolGaN 600V GIT discrete devices includes both top- and bottom-side cooled (TSC / BSC) JEDEC-compliant packages. CoolGaN TSC power packages address higher power requirements, leading to compact and lightweight products with high power density, improved energy efficiency and reduced total system costs, said Infineon.
The CoolGaN devices are available in volume production and samples can be ordered now.
Visitors to Infineon’s stand at PCIM Europe 2023 (09 to 11 May) in Nuremberg, Germany will be able to see CoolGaN 600V GIT HEMT portfolio.
