Infineon packages 1200V CoolSiC Trench MOSFET in TO263-7 package
Automotive applications can take advantage of Infineon Technology’s 1200V CoolSiC MOSFETs in a TO263-7 package. The automotive-grade SiC MOSFET offers high power density and efficiency, enables bi-directional charging and reduces system cost in on-board charging (OBC) and DC/DC applications, said the company.
The 1200V CoolSiC devices are also claimed to offer best in class switching performance through 25 per cent lower switching losses compared to the first generation of MOSFETs. This improved switching behaviour enables high frequency operation, leading to smaller system sizes and increased power density.
A gate source threshold voltage (VGS th) greater than 4 V and a very low Crss/ Ciss ratio, reliable turn-off at V GS of 0V is achieved without the risk of parasitic turn-ons, allowing for unipolar driving to reduce system cost and complexity. The MOSFET is also characterised by a low on resistance (RDSon), reducing conductive losses over the operating temperature range of -55 to +175 degrees C.
The diffusion soldering chip mount technology (.XT technology) is also claimed to significantly improve the package’s thermal capabilities, lowering the SiC MOSFET junction temperature by 25 per cent compared to the first generation.
Creepage distance is 5.89 mm, meeting 800V system requirements and reducing coating effort. Infineon offers a range of RDS(on) options including what is believed to be the only 9.0 mOh type in the TO263-7 package currently on the market.
The 1200V CoolSiC MOSFET in TO263-7 package is available now.
