STMicroelectronics integrates galvanic isolation in GaN driver
The first galvanically isolated gate driver for GaN transistors from STMicroelectronics, the STGAP2GS, reduces the bill of materials costs in applications that require wide bandgap efficiency with robust safety and electrical protection, said the company.
The single-channel driver can be connected to a high voltage rail up to 1200V, or 1700V with the STGAP2GSN narrow body version. The device provides gate driving voltage up to 15V. Capable of sinking and sourcing up to 3A gate current to the connected GaN transistor, the driver ensures tightly controlled switching transitions up to high operating frequencies.
It features just 45 nanoseconds propagation delay across the isolation barrier for a fast dynamic response. In addition, dV/dt transient immunity of ±100V/ns over the full temperature range guards against unwanted transistor gate change. The STGAP2GS is available with separate sink and source pins to allow engineers to tune the gate driving operation and performance.
The STGAP2GS eliminates the need for discrete components to provide optical isolation, which is expected to ease the adoption of GaN technology in consumer and industrial applications such as power supplies in computer servers, factory-automation equipment, motor drivers, solar and wind power systems, home appliances, domestic fans and wireless chargers.
The driver also features built-in system protection including thermal shutdown and under-voltage lockout (UVLO) optimised for GaN technology.
ST also offers two demonstration boards, the EVSTGAP2GS and EVSTGAP2GSN, which combine the standard STGAP2GS and narrow STGAP2GSN with ST’s SGT120R65AL 75 mOhm, 650V enhancement-Mode GaN transistors.
The STGAP2GS in SO-8 widebody package, and the STGAP2GSN SO-8 narrow version, are available now.
