Miniature common-drain N-channel MOSFET is for quick charging applications
For use in battery protection circuits in lithium-ion battery packs, in smartphones, tablets, power banks, compact digital cameras and digital SLR cameras, for example, the SSM14N956L is a 12V common drain N-channel MOSFET rated 12A by Toshiba Electronics Europe.
They feature very low on-resistance making it suitable for quick charging applications, said the company.
The protection circuits that reduce heat generation during the charging and discharging of Li-ion battery packs must have low power consumption. The applications are also typically compact, so suitable MOSFETs must be small and thin while delivering low levels of on-resistance, explained Toshiba.
This 20A MOSFET, the SSM14N956L is rated for a 12V source-to-source voltage (VSSS) and uses Toshiba’s micro-process (which is also used by the already available 13.5A SSM10N954L). The micro process ensures excellent low on-resistance (RSS(ON)) characteristics, as low as 1mOhm, said the company, to limit conduction losses. Additionally, the process delivers low gate source leakage current (IGSS) of ±1microA (maximum), allowing for low standby power consumption. Together, these attributes allow for extended battery operation between charges.
The SSM14N956L is designed as a chip-scale package, TCSPED-302701, in order to meet space-constrained applications. Dimensions are just 2.74 x 3.0mm with a typical height of just 0.085mm.
The N-channel MOSFET is shipping now.
Toshiba Electronics Europe offers European consumers and businesses a wide variety of hard disk drive (HDD) products plus semiconductors for automotive, industrial, IoT, motion control, telecomms, networking, consumer and white goods applications. The company’s broad portfolio encompasses power semiconductors and other discrete devices ranging from diodes to logic ICs, optical semiconductors as well as microcontrollers and application specific standard products (ASSPs).
The company also offers Toshiba’s SCiB battery cells and modules with lithium titanium oxide (LTO) for heavy-duty applications and Silicon Nitride (SiN) ceramic substrates used in power semiconductor modules, inverters and converters for their heat dissipation characteristics and strength.
