Infineon integrates EC7 diode for energy-efficient Trenchstop IGBT
A design feature of the latest addition to the 7th generation Trenchstop IGBT family is an EC7, co-packed diode with an advanced emitter-controlled design, and which is coupled with high-speed technology to fulfil the need for environmentally conscious, power efficient power. The discrete 650V IGBT7 H7 variant, offers control and performance, resulting in significant loss reduction, improved efficiency and higher power density, claimed Infineon.
It can be used in a variety of applications, including string inverters, energy storage systems, electric vehicle charging applications, and traditional applications such as industrial UPS and welding.
In a discrete package, the 650V Trenchstop IGBT7 H7 can deliver up to 150A. The portfolio includes variants from 40A to 150A and is offered in four different package types, namely TO-247-3 HCC, TO-247-4, TO-247-3 Plus and TO-247-4 Plus. The TO-247-3 HCC variant features a high creepage distance, noted Infineon. The TO-247 4-pin packages (standard: IKZA, Plus: IKY) reduce switching losses, but also offer additional benefits such as lower voltage overshoot, minimised conduction losses and low reverse current loss. The Trenchstop IGBT 7 H7 simplifies the design and minimises the need to connect devices in parallel, said Infineon.
The 650V Trenchstop IGBT 7 H7 features robust moisture resistance for reliable operation in harsh environments. The device is qualified for industrial use according to the relevant tests of JEDEC47/20/22, especially HV-H3TRB, making it well suited for outdoor applications.
The Trenchstop IGBT 7 H7 complements NPC1 topology often used in applications such as solar and energy storage systems.
The IGBT can be ordered now and qualification samples are available.
