650V E series power MOSFETs slash on-resistance, says Vishay Intertechnology
The fourth generation 650V E series power MOSFETs are claimed to have the industry’s lowest RDS(ON)*Qg and RDS(ON)*Co(er) figure of merits as well as reducing on-resistance by 48.2 per cent compared to previous generation devices.
The Vishay Siliconix n-channel SiHP054N65E MOSFETs are suitable for high efficiency and power density applications such as telecomms, industrial, and computing. They also offer a 59 per cent lower resistance times gate charge, a key figure of merit (FOM) for 650V MOSFETs used in power conversion applications.
The SiHP054N65E and other devices in the fourth-generation 650V E series, addresses the need for efficiency and power density improvements in power factor correction (PFC) and subsequent DC/DC converter blocks. Typical applications will include servers, edge computing, and data storage, uninterrupted power supplies, high intensity discharge (HID) lamps and fluorescent ballast lighting, solar inverters, welding equipment, induction heating, motor drives and battery chargers, advised Vishay.
The SiHP054N65E MOSFETs are built on Vishay’s energy-efficient E series superjunction technology. They have low typical on-resistance of 0.051 Ohm at 10V results in a higher power rating for applications above 2kW and allows the device to address the Open Compute Project’s Open Rack V3 (ORV3) standards.
In addition, the MOSFET offers low gate charge down to 72nC, resulting in an FOM of 3.67 Ohm*nC is 1.1 per cent lower than the closest competing MOSFET in the same class, claimed Vishay, translating into reduced conduction and switching losses to save energy and increase efficiency. The devices address the specific titanium efficiency requirements in server power supplies or reach 96 per cent peak efficiency in telecomms power supplies.
For improved switching performance in hard-switched topologies such as PFC, half-bridge and two-switch forward designs, the MOSFET provides low typical effective output capacitances Co(er) and Co(tr) of 115pF and 772pF, respectively. The device’s resulting resistance times Co(er) FOM is an industry-low 5.87 Ohm*pF. Offered in the TO-220AB package and providing increased dv/dt ruggedness, the SiHP054N65E is RoHS-compliant and halogen-free. The MOSFETs are also designed to withstand over-voltage transients in avalanche mode with guaranteed limits through 100 per cent UIS testing.
Samples and production quantities of the SiHP054N65E are available now.
