Toshiba refines SiC MOSFETs for reduced switching losses
Toshiba Electronics Europe’s third generation SiC MOSFETs are in a new four-pin package and are claimed to offer improved switching performance of MOSFET in industrial applications.
The TWxxxZxxxC series of ten SiC MOSFETs are intended to reduce losses in a variety of industrial applications including switching power supplies for servers and data centres, electric vehicle (EV) charging stations, photovoltaic (PV) inverters and uninterruptible power supplies (UPS).
They are the first Toshiba SiC products to be housed in a TO-247-4L(X) package with a fourth pin. This allows the provision of a Kelvin connection of the signal source terminal for the gate drive, reducing the parasitic inductance effects of the internal source wire and improving high-speed switching performance, said Toshiba. Comparing the TW045Z120C with Toshiba’s existing TW045N120C (in a three-pin TO-247) Toshiba reports an improvement in turn-on loss of approximately 40 per cent while the turn-off loss is improved by around 34 per cent.
There are five devices with a drain source (VDSS) rating of 650V and five devices rated at 1200V. The typical RDS(on) (drain source on-resistance) is between 140 and 15 mOhm. Combined with low gate drain charge (QGD) value, it will enable low losses even in high frequency applications, said the company.
The devices are capable of delivering continuous drain currents (ID) of up to 100A.
Shipments of the new series of SiC MOSFETs start today.
Toshiba added that it will continue to contribute to improving the efficiency and power density of industrial equipment by continuing to develop its product lineup.
Toshiba Electronics Europe (TEE) offers a variety of hard disk drive (HDD) products plus semiconductor solutions for automotive, industrial, IoT, motion control, telecomms, networking, consumer and white goods applications. Its portfolio encompasses power semiconductors and other discrete devices ranging from diodes to logic ICs, optical semiconductors as well as microcontrollers and application specific standard products (ASSPs).
TEE also offers Toshiba’s SCiB battery cells and modules with lithium titanium oxide (LTO) for heavy duty applications and Silicon Nitride (SiN) ceramic substrates used in power semiconductor modules, inverters and converters for their heat dissipation characteristics and strength.
TEE has its headquarters in Düsseldorf, Germany, with branch offices in France, Italy, Spain, Sweden and the United Kingdom providing marketing, sales and logistics services.
