Rohm launches 650V GaN HEMT in a compact, high-heat dissipation TOLL package
Rohm has developed 650V GaN HEMTs in the TOLL (TO-LeadLess) package: the GNP2070TD-Z. Featuring a compact design with excellent heat dissipation, high current capacity, and superior switching performance, the TOLL package is increasingly being adopted in applications that require high power handling, particularly inside industrial equipment and automotive systems.
Improving the efficiency of motors and power supplies, which account for most of the world’s electricity consumption, has become a significant challenge to achieving a decarbonised society. As power devices are key to improve efficiency, the adoption of new materials such as SiC (Silicon Carbide) and GaN is expected to further enhance the efficiency of power supplies.
Rohm began mass production of its 1st generation of its 650V GaN HEMTs in April 2023, followed by the release of power stage ICs that combine a gate driver and 650V GaN HEMT in a single package. This time, Rohm has developed the product incorporating 2nd generation elements in a TOLL package, and added it to existing DFN8080 package to strengthen ROHM’s 650V GaN HEMT package lineup – meeting the market demand for even smaller and more efficient high-power applications.
To achieve mass production, Rohm leveraged proprietary technology and expertise in device design, cultivated through a vertically integrated production system, to carry out design and planning. Under the collaboration announced on December 10, 2024, front-end processes are carried out by Taiwan Semiconductor Manufacturing Company Limited (TSMC). Back-end processes are handled by ATX. On top, Rohm plans to partner with ATX to produce automotive-grade GaN devices.
In response to the increasing adoption of GaN devices in the automotive sector, which is expected to accelerate in 2026, Rohm plans to ensure the rapid introduction of automotive-grade GaN devices by strengthening these partnerships in addition to advancing its own development efforts.
