Infineon expands XENSIV magnetic current sensor family
Infineon is expanding its XENSIV magnetic current sensor family with the new TLE4971/TLI4971 sensors, housed in a 300-mil package. These new products offer the highest accuracy in magnetic coreless current sensors on the market, with a total error of only 0.7 percent over temperature and lifetime. Combined with the characteristics of the 300-mil package, the high accuracy makes them ideal for current conversion in automotive and industrial applications.
The new XENSIV sensors are available in six different pre-programmed current ranges: 16 A, 20 A, 30 A, 35 A, 40 A, and 50 A. The 300-mil package completes Infineon’s 3.3 V current sensor portfolio. This established package (already in use for EiceDRIVER) was specifically optimised to support internal low-resistance while offering both reinforced and basic isolation as well as a creepage distance and clearance of 8 mm for high-voltage applications.
The sensors integrate a current rail with a typical insertion resistance of 550 µΩ for minimising power loss. The sensors support bi-directional measurement of AC and DC current via an analog interface. Additionally, the sensors offer two fast overcurrent detection outputs to protect the power circuit. With a robust design and advanced sensor technology, the TLE4971 is designed for automotive applications, including on-board chargers and high-voltage auxiliary drives. The TLI4971 is designed for industrial applications such as photovoltaic inverters, energy storage systems, and charging applications such as DC fast charging stations. Other key applications include industrial general-purpose drives and servo drives.
The measurement accuracy of the devices is enabled by their proprietary temperature and stress compensation. Unlike magnetic core-based solutions, the sensors are free of hysteresis and saturation effects. The differential sensing principle eliminates the need for magnetic cores or shielding against stray fields. With their fast overcurrent detection (OCD), the sensors are also suitable for applications with wide bandgap solutions such as GaN or SiC. The integrated EEPROM allows adjustment of the sensor’s overcurrent detection limits and deglitch filters for different applications.
