ST launches rad-hard low-voltage rectifier products for LEO applications
ST has expanded its range of rad-hard ICs with three new low-voltage rectifier diodes for the power circuits of Low Earth Orbit (LEO) satellites. Delivered in mass-produced, lightweight SOD128 plastic packages, the flight-ready LEO1N58xx diodes provide power management and protection in circuits such as switched-mode power supplies and high-frequency DC-DC converters.
Manufactured using ST’s space-proven Power Schottky and Ultrafast technologies, the LEO1N58xx family meets the New Space industry’s stringent demands for cost-effectiveness, radiation hardness, small size, quality assurance, and higher-volume availability. Developed from ST’s space-grade European Space Components Coordination (ESCC) approved diodes, the new LEO-ready parts are produced under strict quality controls using automotive IATF 16949 manufacturing processes with wafer-level traceability. The devices are AEC-Q101 qualified, subject to Wafer-Lot Acceptance Testing (WLAT), and supplied with a Certificate of Conformity (CoC).
The LEO1N5819 and LEO1N5822 Schottky diodes offer 1A / 45V and 3A / 40V performance respectively, while the ultra-fast LEO1N5811 operates at up to 6A and 150V. The two Schottky devices are specified across the -40°C to 150°C temperature range, while the LEO1N5811 features an even wider temperature tolerance, up to 175°C.
All three variants are radiation-hardened by design for operation in demanding conditions with respect to temperature, total ionising and non-ionising radiation (TID and TNID), and single-event effects (SEE). Qualification complies with ESCC 22900 for TID (up to 300 krad(Si)), ESCC 22500 for TNID (up to 3 x 1011 p/cm2), and ESCC 25100 for single-event burnout (SEB, up to 60 MeV/cm²/mg).
