Rutronik offers the CoolGaN Drive series for highly integrated GaN power solution
With the CoolGaN Drive HB 600 V G5, Infineon expands its GaN portfolio with a highly integrated half-bridge solution that combines power transistors and gate driver in a compact package. Rutronik has added the new family to its portfolio, addressing designers of high-power density and energy-efficient systems in consumer, industrial, and light electric vehicles applications.
The CoolGaN Drive HB 600 V G5 integrates two CoolGaN Transistors 600 V G5 with an on-chip high-side/low-side gate driver including level shifter and bootstrap diode. This high level of integration significantly reduces external circuitry, simplifies PCB layout and supports fast, reproducible system integration.
It is housed in a compact TFLGA-27 package (6 × 8 mm), enabling high power density while minimising board space. The integrated driver supports PWM-compatible control as well as adjustable dv/dt control, allowing designers to fine-tune switching behaviour and EMC performance.
Thanks to GaN-typical zero reverse-recovery charge (zero-Qrr) and a very short propagation delay of typically 98 ns with low channel mismatch, the CoolGaN Drive HB 600 V G5 is particularly well suited for high-frequency, high-efficiency power converters. The integrated gate driver operates from a single 12 V supply and features fast UVLO recovery, supporting stable operation even under dynamic load conditions.
The device family is JEDEC qualified and designed for use in demanding environments. Typical target applications include consumer, industrial, and light electric vehicles, where high efficiency, compact form factors, and short time-to-market are key requirements.
