Alliance Memory adds 16Gbit model to CMOS DDR4 SDRAM family
A higher density option in Alliance Memory’s portfolio of CMOS DDR4 SDRAMs has been announced. The 16Gbit AS4C1G16D4-062BCN delivers improved performance over earlier DDR3 SDRAMs, with lower power consumption and higher speeds and transfer rates.
To increase battery life in portable electronics such as smartphones and tablets, the DDR4 SDRAM has a low operating voltage of +1.2V (±0.06V). The AS4C1G16D4-062BCN is designed, qualified and recommended for use in 5G designs, computing applications, surveillance systems, smart meters, human machine interfaces (HMI) and digital signal controllers.
It is built on an 8n-pre-fetch architecture to offer clock speeds up to 1600MHz and transfer rates up to 3200Mtransfers per second.
The 1Gbit x 16-bit AS4C1G16D4-062BCN supports sequential and interleave burst types with read or write burst lengths of BC4, BL8, and on the fly. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh.
The DDR4 SDRAM is a drop-in, pin-for-pin-compatible replacement and eliminates the need for costly redesigns and part requalification, explained Alliance Memory. The DRAM operates in the commercial temperature range (0 to +95 degrees C) suitable for the industrial, networking, telecommunications, gaming, and consumer markets.
Samples and production quantities of the AS4C1G16D4-062BCN are in stock and available now.
Alliance Memory provides critical and hard-to-find memory ICs for the communications, computing, consumer electronics, medical, automotive, and industrial markets. The company’s product range includes flash, DRAM and SRAM memory ICs with commercial, industrial, and automotive operating temperature ranges and densities from 64kbit to 8Gbyte.
Alliance Memory is a privately held company with headquarters in Kirkland, Washington and regional offices in Europe, Asia, Canada, and South America.
