EPC delivers low RDS(on) GaN FETs in thermally enhanced QFN package
Two GaN FETs by Efficient Power Conversion (EPC) are claimed to be the lowest RDS(on) 150 and 200V transistors available today.
The 150V, 3.0 mOhm EPC2305 and the 200V, 5.0 mOhm EPC2304 GaN FETs are designed for DC/DC conversion, AC/DC switch mode power supplies and chargers, higher power density USB chargers and power supplies, solar optimisers and micro inverters and motor drives.
Both are in a thermally enhanced QFN package with exposed top and a small footprint of just 3.0 x 5.0mm.
In addition to low RDS(on), the eGaN FETs are 15 times smaller than alternative Si MOSFETs, said EPC. Other parameters, QG, QGD, QOSS, are more than three times smaller than Si MOSFETs and the reverse recovery charge (QRR) is zero. These characteristics result in switching losses that are six times smaller in both hard switching and soft switching applications, confirmed EPC. The driver losses are three times less than silicon alternatives while ringing and overshoot are both significantly reduced, according to the company.
For sinusoidal BLDC motor drives, the EPC2304 and EPC2305 enable less than 20 nanoseconds deadtime and higher frequency to reduce noise, minimise size to allow for integration with the motor, reduce the input filter and eliminate the electrolytic capacitors. This also increases motor + driver efficiency more than eight per cent by eliminating vibrations and distortions, reported EPC. As a result, they can be used for forklift, e-scooter, e-mobility, robots and power tool motor drives.
For DC/DC conversion operating from 80 to 20V, the EPC2304 and EPC2305 enable higher switching frequency and up to five times higher density, and higher efficiency to simplify cooling.
They also provide high efficiency at minimal size and weight and are robust for used in solar optimisers and micro inverters.
The new devices are footprint compatible with the earlier releases, the 100V, 1.8 mOhm EPC2302, the 100V, 3.8 mOhm EPC2306, and the 150V 4.9 mOhm EPC2308.
There is also the EPC90140 development board, a half bridge featuring the EPC2304 GaN FET and the EPC90143 development board, a half bridge featuring the EPC2305 GaN FET. Both boards measure 2.0 x 2.0 inches (50.8 x 50.8mm) and are designed for optimal switching performance. They contain all critical components for evaluation.
The EPC2304 and EPC2305, together with the EPC90140 and EPC90143 development boards are available for immediate delivery from Digi-Key.
Designers can also investigate replacing silicon MOSFETs with a GaN solution via EPC GaN Power Bench’s cross-reference tool. The cross-reference tool is engineered to find a suggested replacement based on operating conditions.
