EPC shrinks packages for two latest 40V rad-hard GaN FETs
Designed for demanding space applications, Efficient Power Conversion’s (EPC’s) family of radiation-hardened (rad hard) GaN devices for power conversion now include two new 40V devices rated at 62A and 250A.
The Rad Hard product family covers a wide range of applications in harsh environments, such as space and other high reliability military applications”, said Alex Lidow, CEO, and co-founder of EPC.
The EPC7001 is a 40V, 4 mOhm, 250A pulsed, rad hard GaN FET in a small 7.0mm2 footprint. The second addition to the family is the EPC7002, a 40V, 14.5 mOhm, 62A pulsed, rad-hard GaN FET in an even smaller footprint of just 1.87mm2. Both devices have a total dose radiation rating greater than 1,000k Rad(Si) and SEE immunity for LET (linear energy transfer) of 83.7MeV/mg/cm2 with VDS (drain source voltage) up to 100% of rated breakdown. The two GaN FETs, along with the rest of EPC’s Rad Hard family, are offered in a chip-scale package. Packaged versions are available from EPC Space.
EPC’s eGaN FETs and ICs are offered as an alternative to conventional rad hard silicon devices for high reliability and space applications. EPC’s rad hard devices are significantly smaller, said the company and have 40 times better electrical performance, and lower overall cost than rad hard silicon devices. EPC continued that its rad hard devices exhibit superior resistance to radiation, supporting higher total radiation levels and SEE LET levels compared to traditional silicon devices.
The GaN FETs can be deployed in DC/DC power converters, motor drives, lidar, deep probes and ion thrusters for space applications. They are particularly well-suited for satellites operating in both low earth orbit (LEO) and geosynchronous earth orbit (GEO), as well as avionics systems, said the company.
The EPC7001 and EPC7002 are available for engineering sampling now.
EPC specialises in enhancement mode GaN (eGaN) based power management. The company says that eGaN FETs and integrated circuits provide performance many times greater than the best silicon power MOSFETs in applications such as DC/DC converters, remote sensing technology (lidar), motor drives for e-mobility, robotics, and drones and low-cost satellites.
