Farnell offers onsemi’s EliteSiC range for energy infrastructure
Distributor Farnell announces the optimised silicon carbide (SiC) EliteSiC products for energy infrastructure from onsemi are available through its channels. The SiC devices have reduced switching losses under real-world conditions when compared to their competitors, said Farnell.
Typical applications for onsemi EliteSiC devices include UPS, DC/DC converters, boost inverters, solar inverters, electric vehicle charging stations and industrial power systems. These devices are Pb−free, halide-free and RoHS-compliant.
Available ex stock from Farnell are the EliteSiC Power, single N channel device. Features include RDS(on) of 80m, low gate charge of 56nC), low effective output capacitance of 79 pF, junction temperature of 175 degrees C and 100 per cent avalanche tested.
The EliteSiC MOSFET NXH006P120MNF2 is a power module containing a 6m / 1,200V SiC MOSFET half bridge and a thermistor in an F2 package. Options include being supplied with or without pre−applied thermal interface material (TIM) and solderable or press−fit pins.
Adrian Cotterill, global product segment leader of Transistors & WBG at Farnell, said: “This is a key addition to Farnell’s portfolio that will ensure energy infrastructure systems are developed using the highest calibre, best-of-breed components for which onsemi is renowned. These new, highly optimised SiC products meet the latest performance requirements of energy infrastructure end applications.”
onsemi has a focus on automotive and industrial end-markets, such as vehicle electrification and safety, sustainable energy grids, industrial automation and 5G and cloud infrastructure.
The new energy infrastructure solutions from onsemi are now available from stock at Farnell in EMEA, Newark in North America and element14 in APAC.
