GaN ICs reduce design-in efforts, says Cambridge GaN Devices
At this week’s APEC in Houston, Texas, USA, Cambridge GaN Devices debuts the first use of its eMode 650V GaN devices, powered by the company’s patented ICeGaN technology.
The fabless semiconductor company will announce its ICeGaN 650V H1 series, claiming it is capable of reducing power losses by up to 50 per cent. There are four GaN-based devices in the series.
According to Cambridge GaN Devices (CGD), the 650V H1 product series is an industry first, enabling the use of standard MOSFET drivers and with no external components needed for protection. Engineers will be able to use CGD’s GaN-based technology in applications currently run with silicon-based devices or with other GaN devices.
The patented ICeGaN (Integrated Circuit Enhancement Mode GaN) technology merges the ease-of-use of cascode configurations with the simplicity of a single die eMode (normOFF) HEMT, together with a number of integrated smart sense and protection features in a single die that delivers up to 50 per cent power loss reduction compared to legacy silicon die, said CGD. Additionally, the technology is fully scalable on power and voltage.
ICeGaN is based on GaN with an intelligent and self-protecting mechanism that enhances the functionality, the versatility and the reliability of the transistor, said CGD. The GaN technology can be applied to any system that requires power and operates in the 650V segment, for example consumer electronic products such as mobile chargers, adapters for laptops, gaming and all in one computers and switch mode power supplies for consumer applications. The 650V H1 series can also be used in lighting and server power, with further expansion planned to target high power servers and telecomms markets for data centres, PV inverters and renewable energy production and EVs.
Andrea Bricconi, CGD’s vice president of business development, commented: “The ICeGaN 650V H1 series is focused on making life easier for all those who have been trying to design-in GaN transistors and have dedicated significant R&D effort to figure out how to drive them.”
The four devices are easy to use because they can be seamlessly interfaced with gate drivers, like a silicon MOSFET continued Bricconi. No additional components, such as clamping diodes for protection or negative voltages to turn off the power transistor are needed.
They also exhibit a wide range of Rds (on) – from 55 to 200 mOhm. The ICeGaN 650V H1 Series devices are offered in the DFN5x6 and DFN8x8 surface mount packages, making them suitable for use in most low and mid power SMPS applications. Specific IC and packages solutions for high power markets are in preparation, said Bricconi.
Visit CGD at stand 1733 APEC (20-24 March, 2022).
