Gate driver IC supports 1,200V IGBTs and SiC MOSFETs for EV inverters
Designed to drive high voltage power devices such as IGBTs (insulated gate bipolar transistors) and SiC (silicon carbide) MOSFETs for electric vehicle (EV) inverters, the RAJ2930004AGM has been released by Renesas Electronics. It supports 1200V power devices with 3.75kV rms in isolation voltage.
Renesas explained that gate driver ICs provide an interface between the inverter control MCU and the IGBTs and SiC MOSFETs that deliver power to the EV inverter. They receive control signals from the MCU in the low voltage domain and transfer these signals to rapidly turn power devices on and off in the high voltage domain. To accommodate the higher voltages of EV batteries, the RAJ2930004AGM exceeds the previous generation’s 2.5kV rms isolator and can support power devices with a withstand voltage of up to 1,200V.
Output peak current is 10A and the RAJ2930004AGM is equipped with protection/fault detection functions, an on-chip active Miller clamp, soft turn-off, overcurrent protection (DESAT protection), under-voltage lockout (UVLO) and fault feedback.
The operating temperature range is -40 to +125 degrees C with a maximum junction temperature of 150 degrees C.
The gate driver IC also boasts superior CMTI (common mode transient immunity) performance at 150 V per nanosecond or higher. This is sufficient to provide reliable communication and increased noise immunity while meeting the high voltages and fast switching speeds required in inverter systems. The RAJ2930004AGM offers the basic functions of a gate driver in a small SOIC16 package, making it ideal for cost-effective inverter systems, said Renesas.
The RAJ2930004AGM can be used together with Renesas IGBTs as well as with IGBTs and SiC MOSFETs from other manufacturers. Other applications which are suitable for the IC are those that use power semiconductors, such as on-board chargers and DC/DC converters.
Renesas also offers the xEV inverter kit which combines gate driver ICs with MCUs, IGBTs, and power management ICs. A version incorporating the new gate driver IC is scheduled for release in the first half of 2023.
The RAJ2930004AGM gate driver IC is available today in sample quantities with mass production scheduled for the first quarter of 2024.
