Infineon and DG Matrix leverage silicon carbide technology to advance power infrastructure for AI data centres
Infineon and DG Matrix are partnering to enhance the efficiency of power conversion required to connect AI data centres and industrial power applications to the public grid. As part of the collaboration, DG Matrix will source latest-generation silicon carbide (SiC) technology from Infineon for use in its Interport multi-port solid-state transformer platform.
“AI data centres and next-generation electrification systems demand higher efficiency, higher power density and uncompromising reliability. Solid-state technology, enabled by Infineon’s leading silicon carbide power semiconductors, can deliver this next level of performance and value. Therefore, we are pleased to support DG Matrix with our latest-generation silicon carbide technology to help enable scalable, high-performance power infrastructure. DG Matrix’s multi-port solid-state transformer architecture represents an innovative approach to power conversion,” said Andreas Weisl, Executive Vice President & Chief Sales Officer of Industrial and Infrastructure at Infineon.
A solid-state transformer is an advanced, semiconductor-based power conversion device that replaces conventional copper and iron-based transformers. It features higher efficiency, significantly greater power density (smaller size and lower weight) and improved scalability. Compared to conventional transformers, SSTs are up to 14 times smaller and 40 times lighter[1] and can be deployed much faster. SSTs are a key future technology that connects the public grid to energy-intensive and industrial applications such as AI data centres, while actively controlling voltage, power quality and energy flow. SSTs enable direct power conversion from the medium-voltage levels supplied by the grid to the low voltages required by applications such as AI data centres, electric vehicle (EV) charging infrastructure, renewable energy systems and industrial microgrids.
“Our multi-port architecture was designed to take full advantage of the performance envelope that silicon carbide enables. Infineon’s latest-generation SiC devices strengthen our supply chain and enhance the efficiency, power density and reliability of our Interport platforms. This collaboration supports our mission to deploy faster, more efficient power infrastructure for AI data centres and electrification worldwide,” Haroon Inam, CEO & co-founder of DG Matrix, said.
Global electricity demand is rising, driven by electrification and digitalisation, which create energy-intensive applications such as AI data centres. To address this development, modern power grids must be scaled while maintaining stability, relying on high-performance semiconductor technology. Next-generation semiconductor-based power infrastructure solutions such as DG Matrix’s SST platforms enable smarter, more efficient and more reliable grids. Infineon’s latest SiC power semiconductors serve as a key enabler of these platforms, delivering the efficiency and power density required by AI data centres, EV charging infrastructure, renewable energy systems and microgrids.
Looking ahead, both companies expect continued alignment on next-generation SiC device roadmaps as DG Matrix scales toward higher-voltage platforms and higher-volume production. The integration of Infineon’s SiC technology across DG Matrix’s expanding Interport product family supports the two companies’ mission to accelerate the global deployment of scalable, resilient and efficient power infrastructure for AI data centres and industrial power applications.
