Infineon extends the CoolSiC MOSFET 750 V G2 family
Infineon has launched new packages for the CoolSiC MOSFET 750 V G2 technology, engineered to deliver highest system efficiency and power density in automotive and industrial power conversion applications. This latest innovation is now available in a range of packages, including Q-DPAK and D2PAK, offering a portfolio with typical RDS(on) values up to 60 mΩ at 25°C.
The portfolio extension includes products for various applications, such as onboard chargers and HV-LV DCDC converters in the automotive sector, and server and telecom SMPS, along with EV charging infrastructure in the industrial applications. The ultra-low RDS(on) values of 4 mΩ enables applications that require exceptional static-switching performance, such as eFuse, high-voltage battery disconnect switches, solid-state circuit breakers, and solid-state relays.
One of the key features of the CoolSiC MOSFET 750 V G2 technology is its innovative top-side cooled Q-DPAK package, which provides optimal thermal performance and reliability. This package is designed to handle high-power applications with ease, making it an attractive choice for designers seeking to push the boundaries of power density and efficiency. The technology also exhibits excellent RDS(on) x QOSS and best-in-class RDS(on) x Qfr, contributing to reduced switching loss in both hard-switching and soft-switching topologies with superior efficiency in hard-switching user cases.
Additionally, the CoolSiC MOSFETs 750 V G2 offer a combination of high threshold voltage VGS(th),typ of 4.5 V at 25°C and ultra-low QGD/QGS ratio, which reinforce robustness against parasitic turn-on (PTO). Furthermore, the technology allows for extended gate driving capabilities, supporting static gate voltages of up to -7 V and transient gate voltages of up to -11 V.
