Infineon introduces the first 15 V trench power MOSFETs with OptiMOS™ 7 technology in PQFN packages

The ever-increasing power demand in data centres and computing applications requires advancements in power efficiency and compact power supply design. Infineon responds to trends on the system level by introducing its new OptiMOS™ 7 family, industry’s first 15 V trench power MOSFET technology. The OptiMOS 7 15 V series primarily targets optimised DC-DC conversion for servers, computing, datacenter, and artificial intelligence applications.

The product portfolio includes the latest PQFN 3.3 x 3.3 mm² Source-Down, with bottom- and dual-side cooling variants in standard- and centre-gate footprints. The portfolio also includes a robust PQFN 2 x 2 mm² variant with a reinforced clip. The OptiMOS 7 15 V technology is specifically tailored for DC-DC conversions with low output voltages, particularly in server and computing environments. This advancement aligns with emerging shifts towards high ratio DC-DC conversion in data-center power distribution.

Compared to the established OptiMOS5 25 V, the new OptiMOS 7 15 V achieves a reduction of R DS(on) and FOMQ g by ~30 percent, and FOMQ OSS by ~50 percent by lowering the breakdown voltage. The PQFN 3.3 x 3.3 mm² Source-Down package variants provide a more versatile and effective PCB-design. Furthermore, the PQFN 2 x 2 mm² package provides a pulsed current capability higher than 500 A and a typical R thJC of 1.6 K/W. By minimising conduction and switching losses and incorporating advanced packaging technology, thermal management becomes easy and effective, setting new benchmarks both for power density and overall efficiency.

Availability
The OptiMOS 7 15 V product portfolio can be ordered now and is available in two package sizes: PQFN 3.3 x 3.3 mm² Source-Down variants and PQFN 2 x 2 mm². More information is available at http://www.infineon.com/optimos-7-15v.