Infineon offers OptiMOS power MOSFETs in compact PQFN 2x2mm² package
Infineon has added new discrete power MOSFETs to its PQFN package portfolio.
The OptiMOS 6 power MOSFET 40V (ISK057N04LM6) has 5.7mΩ RDS(on), the OptiMOS 5 25 V (ISK024NE2LM5) and 30V (ISK036N03LM5) MOSFETs have 2.4mΩ and 3.6mΩ RDS(on), respectively. Both are available in the improved PQFN 2x2mm² package.
All three are intended for applications such as synchronous rectification in switched mode power supplies (SMPS) for servers, telecomms and portable and wireless chargers, as well as electric speed controllers for small brushless motors in drones. According to Infineon, they offer a small footprint and high power density to optimise layout routing as well as reduce overall system size.
Infineon says the new OptiMOS 6 40 V and OptiMOS 5 25V and 30V power MOSFETs offer leading-edge silicon technology, package reliability and superior thermal resistance (R thJC, max = 3.2 K/W) in the small PQFN 2x2mm² package. In addition, they are claimed to have industry-leading figures of merit (FOMs, Q G and Q OSS) for dynamic switching performance, together with low switching and reduced conduction losses to ensure optimal energy efficiency and power density, and simplify thermal management, adds the company.
In addition to the compact PQFN package outline which allows smaller, more flexible geometric outlines for end-user applications, the MOSFETs require less need for paralleling in a design which reduces space and system cost, advises Infineon.
