KIOXIA introduces industry’s highest capacity 2Tb QLC flash memory
KIOXIA has announced that it started sample shipments of 2Tb (tera bit) Quad-Level-Cell (QLC) memory devices with its eighth-generation BiCS FLASH 3D flash memory technology. This 2Tb QLC device has the highest capacity in the industry, elevating storage devices to a new capacity point that will drive growth in multiple application segments including AI.
With its latest BiCS FLASH technology, KIOXIA has achieved both vertical and lateral scaling of memory die through proprietary processes and innovative architectures. In addition, the company has implemented the groundbreaking CBA (CMOS directly Bonded to Array) technology, which enables the creation of higher density devices and an industry-leading interface speed of 3.6Gbps[. Together, these advanced technologies are applied in the creation of 2Tb QLC, resulting in the industry’s highest capacity memory device.
The 2Tb QLC is equipped with a bit density approx. 2.3 times higher and a write power efficiency approx. 70 percent higher than KIOXIA’s current fifth-generation QLC device which is the highest capacity in KIOXIA’s products. With a 16-die stacked architecture in a single memory package, the latest QLC device achieves industry-leading 4TB (tera byte) of capacity. It is available with a smaller package size of 11.5 x 13.5mm and a package height of 1.5mm.
In addition to the 2Tb QLC, KIOXIA also added a 1Tb QLC memory devices to its portfolio. In comparison with the capacity-optimised 2Tb QLC, the performance-optimised 1Tb QLC offers approx. a 30 percent faster sequential write performance and approx. a 15 percent improvement in read latency. The 1Tb QLC will be deployed in high performance applications, including client SSD and mobile.
