KIOXIA sampling UFS Ver. 4.1 embedded flash memory devices
KIOXIA has announced that it has begun sampling new Universal Flash Storage (UFS) Ver. 4.1 embedded memory devices. Engineered to meet the demands of next-generation mobile applications, including advanced smartphones with on-device AI, the new devices offer improved performance with greater power efficiency, in a small BGA package.
UFS Ver. 4.1 devices from KIOXIA integrate the company’s BiCS FLASH 3D flash memory and a controller in a JEDEC-standard package. These new UFS devices are built with KIOXIA’s 8th generation BiCS FLASH 3D flash memory. This generation introduces CBA (CMOS directly Bonded to Array) technology – an architectural innovation that marks a step-change in flash memory design. By directly bonding the CMOS circuitry to the memory array, CBA technology enables major gains in power efficiency, performance, and density.
With a blend of speed and low power use, KIOXIA UFS Ver. 4.1 devices are built to enhance user experiences—enabling faster downloads and smoother app performance.
“KIOXIA’s new UFS Ver. 4.1 embedded memory devices signify a notable advancement, reinforcing KIOXIA’s leadership in high-performance storage and its commitment to leading flash storage innovation,” says Axel Störmann, Vice President and Chief Technology Officer for Memory and SSD products, KIOXIA Europe GmbH. “Engineered with 8th generation BiCS FLASH and CBA technology, these devices meet the demands of tomorrow’s next-generation mobile applications, including on-device AI, marking a significant leap forward from predecessors.”
