Low RDS(on) N channel MOSFETs have sufficient efficiency for motor drives
Announcing a line up of 40 to 140V N channel MOSFETs, Rohm Semiconductor says its RS6xxxxBx / RH6xxxxBx series deliver high efficiency operation in a variety of applications. They are suitable for motor drive and industrial power supplies.
A total of 13 parts are available in input choices of 40, 60, 80, 100 and 150V. They are suitable for applications operating on 24, 36 and 48V power supplies such as base stations, servers, and motors for industrial and consumer equipment.
Rohm has adopted copper clip connections and improved the gate structure of the MOSFET design to counter RDS(on) and gate drain charge (Qgd) which increase in proportion to chip size. The result is a MOSFET design that can be large enough in size to drive industrial equipment, such as servers, base stations and motors at lower power losses.
The new MOSFETs achieve an industry-leading RDS(on) of 2.1mΩ, said Rohm, which is approximately 50 per cent lower than conventional MOSFETs. This has been achieved by adopting the HSOP8/HSMT8 package with low-resistance copper clip connections. Improving the element gate structure reduces Qgd by approximately 40 per cent compared with conventional products to reduce both switching and conduction losses. For example, when comparing the efficiency of a power supply evaluation board for industrial equipment, the RS6xxxxBx / RH6xxxxBx MOSFETs achieve an industry-leading efficiency of approximately 95 per cent (peak) in the output current range during steady-state operation, reported Rohm.
Rohm Semiconductor develops and manufactures a large product range from SiC diodes and MOSFETs, analogue ICs such as gate drivers and power management ICs to power transistors and diodes to passive components. Product takes place in manufacturing plants in Japan, Germany, Korea, Malaysia, Thailand, the Philippines, and China. Rohm Semiconductor Europe has its head office near Dusseldorf serving the EMEA region (Europe, Middle East, and Africa).
