Magnachip introduces 150V MXT MOSFET for light EVs
Magnachip Semiconductor has introduced its eighth-generation MXT (Magnachip eXtreme Trench) MOSFET for light electric vehicles (EVs). The 150V MDT15N054PTRH MOSFET is designed for motor controllers and battery management systems (BMS).
The latest iteration of the company’s trench MOSFET technology lowers RDS(on) by 28 per cent, compared to the previous generation. The enhanced design of the core cell and termination means a high figure of merit can be achieved and an increase in the total gate charge can be avoided, said Magnachip.
The MDT15N054PTRH is available in a surface mount device TO-leadless (TOLL) package to reduce product size and improve heat dissipation. The energy efficiency is also enhanced by fast switching, said the company, while enabling high power density.
The MOSFET also features a guaranteed operating junction temperature range of -55 to +175 degrees C, coupled with a high level of avalanche ruggedness for the performance requirements of LEV motor controllers and BMS, added the company.
Magnachip Semiconductor designs and manufactures analogue and mixed signal semiconductors for communications, the IoT, consumer, computing, industrial and automotive applications. It provides a broad range of standard products to customers worldwide. It has more than 40 years of operating history, owns a portfolio of approximately 1,100 registered patents and pending applications, and has extensive engineering, design and manufacturing process expertise.
