Nano-power P-channel MOSFETs simplify bias circuitry
Claimed to be the industry’s first nano-power, precision P-channel MOSFET array, Advanced Linear Devices offers the EPAD MOSFET array as a monolithic device for low power applications and mostly-on operation. It is also claimed to offer the industry’s most precise temperature tracking characteristics while simplifying bias circuitry.
The ALD310702A/ALD310702 joins Advanced Linear Devices’ (ALD’s) EPAD Matched Pair MOSFET family and is available in quad arrays as two separate matched pairs. This P-channel version complements the popular ALD110802 N-channel high-precision devices already available from ALD.
The matched pair circuit simplifies bias circuitry while optimising power usage, says the company, making it suitable for energy harvesting systems, automotive, medical, transportation, robotics applications and wireless products. The EPAD MOSFET array can be used wherever the design relies on self-contained power circuits and which require very low power operation over long periods of time, said ALD.
According to the company, the matched and tracked temperature characteristics of the MOSFET pair also distinguish the company’s EPAD MOSFET from others available today. The temperature tracking means that paired N- and P-channel devices automatically adjust to changing temperatures to ensure stable, uninterrupted operation.
“The temperature tracked and matched MOSFET is important for precision operations, but designers also need to know that the precision is going to be held stable with time and temperature,” observed Robert Chao, president and founder of ALD.
The P-channel MOSFET array offers precision-matched gate threshold voltages of -0.20V ± 0.02V. This enhances I/O signal operating ranges, particularly in extremely low operating voltage environments. Precise offset voltages (VOS) within 1mV are typical. Low minimum operating voltage is less than 0.2V and low operating current is less than 1nA. The MOSFET array also features matched transconductance and output conductance.
The MOSFET is designed for switching and amplifying applications in -0.40V to -8.0V (±0.20V to ±4.0V) systems where low input bias current, low input capacitance and fast switching speeds are required. ALD’s technology enables portable devices that run on trickle charge and energy harvesting power sources, and can also be used for DC/DC converters in electronics equipment, ranging from microprocessors to communications and from computer power supplies to power plants. Typical application examples are differential amplifier input stages, back up power circuits, power failure detectors, sensors in security equipment and portable devices, high-side and sample-and-hold switches, discrete analogue switches / multiplexers and any applications across multiple industry sectors that require an always-available back up battery, confirmed ALD.
The MOSFET array is now available at either Digi-Key or Mouser.
Analogue semiconductor company, Advanced Linear Devices (ALD), specialises in the development and manufacture of precision CMOS linear ICs, including analogue switches, ADCs and chipsets, voltage comparators, operational amplifiers, energy harvesting systems, analogue timers and conventional and precision EPAD MOSFET transistors.
