New 100-150V GaN power transistors from Innoscience reduce junction temperature by 25%
Innoscience Technology has introduced four of its GaN-on-Silicon enhancement mode high electron mobility transistors (HEMT) in its En-FCQFN top-side cooling package, resulting in significant benefits in thermal performance. For example, at 30A, the junction temperature in the top-side cooling package is reduced from 52.2°C for bottom-side cooling package types to 39.6°C, a 25% improvement.
The four power GaN transistors newly released in the En-FCQFN top-side cooling package include the 100V INN100EQ 016A/1.8mΩ and 025A/2.8mΩ parts, as well as the 150V INN150EQ 032A/3.9mΩ and 070A/7.0mΩ devices. The pinout is compatible with bottom-side cooling package parts, and the new devices also retain the characteristics of all Innoscience parts: low resistance; low gate charge; low switching loss; extremely low reverse recovery charge; and excellent efficiency performance.
Innoscience’s 100V~150V GaN series are also available in WLCSP, FCQFN, LGA and other packaging types, covering different on-resistances and application areas. Together with these devices, the new top-side cooling package En-FCQFN parts are available in mass-production volumes. Detailed product specifications, reliability reports and simulation models can be obtained at http://www.innoscience.com.
