New power management chips from TI maximize protection, density and efficiency
Texas Instruments has debuted new power-management chips to support the rapidly growing power needs of modern data centres. As the adoption of high-performance computing and artificial intelligence (AI) increases, data centres require more power-dense and efficient solutions. TI’s new TPS1685 is the industry’s first 48V integrated hot-swap eFuse with power-path protection to support data centre hardware and processing needs. To simplify data centre design, TI also introduced a new family of integrated GaN power stages, the LMG3650R035, LMG3650R025and LMG3650R070, in industry-standard TOLL packaging.
“With data centres increasingly demanding more energy, powering the world’s digital infrastructure begins with smarter, more efficient semiconductors,” said Robert Taylor, general manager, Industrial Power Design Services. “While advanced chips drive AI’s computational power, analog semiconductors are key to maximising energy efficiency. Our latest power-management innovations are enabling data centres to reduce their environmental footprint while supporting the growing needs of our digital world.”
As power demands surge, data centre designers are shifting to 48V power architectures for enhanced efficiency and scalability to support components such as CPUs, graphics processing units and AI hardware accelerators. TI’s 48V stackable integrated hot-swap eFuse with power-path protection empowers designers to tackle high-power (>6kW) processing needs with a scalable device that simplifies design and reduces solution size by half compared to existing hot-swap controllers in the market.
In addition, TI introduced a new family of integrated GaN power stages. The LMG3650R035, LMG3650R025 and LMG3650R070 leverage the benefits of TI GaN in an industry-standard TOLL package, allowing designers to take advantage of TI GaN efficiency without costly and time-consuming redesigns.
The new power stages integrate a high-performance gate driver with a 650V GaN field-effect transistor (FET) while achieving high efficiency (>98%) and high-power density (>100W/in3). They also integrate advanced protection features including over-current protection, short-circuit protection and over-temperature protection. This is especially important for AC/DC applications like server power, where designers are challenged to push more power into smaller spaces.
