ON Semiconductor expands SiC MOSFET modules for EV charging
At APEC 2021, ON Semiconductor will introduce a pair of 1200V SiC MOSFET 2-pack modules for the electric vehicle (EV) market.
As sales of EV continue to grow, infrastructure must be rolled-out to meet the needs of drivers, providing a network of rapid charging stations that will allow them to complete their journeys quickly and without range anxiety. This sector is rapidly evolving, requiring power levels in excess of 350kW and efficiencies of 95 per cent becoming the ‘norm’. These chargers have to be compact, robust and reliable.
The 1200V M1 full SiC MOSFET 2-pack modules are based upon planar technology and suited to a drive voltage in the range of 18 to 20V, are simple to drive with negative gate voltages. The larger die reduces thermal resistance compared to trench MOSFETs, reducing die temperature at the same operating temperature.
Configured as a 2-pack half bridge, the NXH010P120MNF is a 10mOhm device housed in an F1 package while the NXH006P120MNF2 is a 6mOhm device in an F2 package. The packages have press-fit pins for industrial applications and an embedded negative temperature co-efficient (NTC) thermistor facilitates temperature monitoring.
The SiC MOSFET modules have been designed to work alongside driver solutions such as the NCD5700x devices. The recently introduced NCD57252 dual channel isolated IGBT/MOSFET gate driver offers 5kV of galvanic isolation and can be configured for dual low-side, dual high-side or half-bridge operation.
The NCD57252 is housed in a small SOIC-16 wide body package and accepts logic level inputs (3.3, 5.0 and 15V). The high current device (source 4.0A / sink 6.0A at Miller plateau voltage) is suitable for high-speed operation as typical propagation delays are 60 nano seconds.
ON Semiconductor has also announced 650V SiC MOSFETs which employ a novel active cell design combined with advanced thin wafer technology enabling a best-in-class figure of merit (FoM) for (RDS(on)*area). Devices in the series such as the NVBG015N065SC1, NTBG015N065SC1, NVH4L015N065SC1 and NTH4L015N065SC offer the lowest RDS(on) in the market for D2PAK7L / TO247 packaged MOSFETs.
The 1200 and 900V n-channel SiC MOSFETs feature a small chip size that reduces device capacitance and gate charge (Qg – as low as 220nC), reducing switching losses when operating at the high frequencies demanded by EV chargers.
APEC 2021 will be held online from 14 to 17 June. ON Semiconductor will also
