Rad-hard GaN transistor is cost-effective, says EPC Space
A 60V radiation-hardened (rad-hard) GaN transistor, the EPC7014UB, is lower in cost and is a more efficient solution than the nearest comparable rad-hard silicon MOSFET, says EPC Space. The 60V GaN device outperforms rad-hard silicon-based devices with higher breakdown strength, faster switching speed, and lower on-resistance, says the company.
Lower resistance and gate charge enable faster power supply switching frequencies resulting in higher power densities, higher efficiencies, and more compact and lighter weight circuitry for critical spaceborne missions.
The EPC7014UB is therefore suitable for power supplies for satellites and space mission equipment, light detection and ranging (lidar) for robotics and autonomous navigation and rendezvous docking, motor drives for robotics, instrumentation and reaction wheels, and ion thrusters for satellite orientation and positioning, as well as interplanetary propulsion of low-mass robotic vehicles. It can also be used as a gate driver interface between CMOS or TTL control circuits and power devices in a rad-hard environment.
The EPC7014UB, is a 60V, 580mOhm, 4A pulsed, rad-hard eGaN FET in an industry standard UB package. It has a total dose rating greater than 1Mrad and single event effect (SEE) immunity for LET of 85MeV/(mg/cm2). The FET is also offered in a chip-scale package from EPC.
“GaN technology enables a new generation of power conversion and motor drives in space,” said Bel Lazar, CEO of EPC Space. “We are excited about this technology’s ability to provide mission-critical components for the space and other high-reliability markets”.
EPC Space provides revolutionary high-reliability, radiation-hardened enhancement-mode gallium nitride (eGaN) power management solutions for space and other harsh environments.
