Richardson RFPD introduces 650V GaNpx transistors from GaN Systems
The second-generation of GaN transistors by GaN Systems is available from Richardson RFPD, an Arrow Electronics company. The GS-065-060-3-B/T GaN transistors are available immediately from the distributor and with full design support capabilities.
There are two 650V E-mode GaN transistors in the series. Both provide low RDS(on) (25 mOhm) and feature a 60A IDS rating and GaN Systems’ Island Technology cell layout for high current die performance and yield. The transistors are offered in GaNpx packaging that enables low inductance and low thermal resistance in a small form factor. The package features dual gate pads for optimal board layout says Richardson RFPD.
The GS-065-060-3-B is bottom-side cooled design and the GS-065-060-3-T is top-side cooled. Both offer low junction-to-case thermal resistance for demanding high-power applications, including solar inverters, energy storage systems, on-board chargers, uninterruptable power supplies, industrial motor drives and wireless power transfer.
The gate drive requirements are 0 to 6.0V with transient tolerant gate drive of -20 / +10V and high switching frequency is above 10MHz. Other features are a reverse conduction capability and zero reverse recovery loss.
Richardson RFPD specialises in the RF, wireless, IoT and power technologies markets and has relationships radio frequency and power component suppliers. Richardson RFPD said its worldwide design centres and technical sales team provide comprehensive support from prototype to production.
