Rohm releases power stage ICs to reduce size of primary power supplies
The BM3G0xxMUV-LB series of power stage ICs are able to reduce component volume by 99 per cent and power loss by 55 per cent when replacing silicon MOSFETs, claimed Rohm.
The EcoGaN power stage ICs with built-in 650V GaN HEMTs and gate driver are suitable for primary power supplies inside industrial and consumer applications such as data servers and AC adapters.
Consumer and industrial sectors demand greater energy savings but while GaN HEMTs are expected to significantly contribute to greater miniaturisation and improved power conversion efficiency, they require a dedicated gate driver. Rohm has integrated GaN HEMTs and gate drivers into a single package for the BM3G0xxMUV-LB series (BM3G015MUV-LB and BM3G007MUV-LB). Both incorporate additional functions and peripheral components to maximise GaN HEMT performance along with 650V GaN HEMTs. The wide drive voltage range of 2.5V to 30V enables compatibility with virtually any controller IC in primary power supplies, said Rohm, to facilitate replacement of existing silicon (super junction) MOSFETs. It is therefore possible to simultaneously reduce component volume and power loss by approximately 99 per cent and 55 per cent, respectively, said Rohm, to achieve higher efficiency in a smaller size.
The ICs are optimised for primary power supplies (AC/DC, PFC circuits) in a variety of applications, from consumer (home appliances, AC adapters, PCs, TVs, refrigerators and air conditioners) to industrial uses, for example servers and office automation devices.
They are available now from distributors Digikey, Mouser and Farnell, together with evaluation boards.
