ROHM’s SiC MOSFET adopted for mass production in Toyota’s New BEV “bZ5”
The power module equipped with ROHM’s 4th generation SiC MOSFET bare chip has been adopted in the traction inverter of Toyota’s new crossover BEV “bZ5” for the Chinese market.
The power module adopted this time has started mass production shipments from HAIMOSIC, a joint venture between ROHM and Zhenghai Group. ROHM’s power solutions centred on SiC MOSFETs contribute to the extended range and enhanced performance of the new BEV.
ROHM aims to complete the construction of the production line for the next-generation 5th generation SiC MOSFET by 2025, and is also accelerating the market introduction plans for the 6th and 7th generations, focusing on the development of SiC power devices. ROHM will continue to work on improving device performance and production efficiency, and strengthen the system to provide SiC in various forms such as bare chips, discrete components, and modules, promoting the spread of SiC and contributing to the creation of a sustainable mobility society.
The “bZ5” is a crossover BEV jointly developed by Toyota, BTET, FAW Toyota, etc., with the concept of “Reboot.” It features active and iconic styling and is designed to provide a personal space for young users known as Generation Z. The driving range is 550 km for the lower grade and 630 km (CLTC mode) for the higher grade. Reservations began on April 22, 2025, the day before the opening of the 2025 Shanghai Motor Show, attracting significant attention.
