SiC 650V Schottky barrier diodes enhance efficiency for industrial equipment
A third generation process technology has been used by Toshiba Electronics Europe for 12 650V SiC Schottky barrier diodes (SBDs). They have forward voltage of 1.2V and are specifically intended for use in efficiency-critical industrial equipment applications including switching power supplies, electric vehicle (EV) charging stations and photovoltaic (PV) inverters.
The TRSxxx65H series devices use new Schottky metal and optimise the junction barrier Schottky (JBS) structure of the second generation products, to lower the electric field at the Schottky interface and reducing leakage current delivering enhanced efficiency.
According to Toshiba, they achieve low forward voltage (VF) of 1.2V (typical). This represents a 17 per cent reduction when compared to second-generation products. The new SBDs have improved the trade-offs between VF and total capacitive charge (QC) which is typically 17nC for the TRS6E65H, added Toshiba.
The VF and reverse current (IR) ratio is improved compared to second-generation products with the TRS6E65H achieving a typical IR value of 1.1 microA. All of these improvements reduce power dissipation and contribute to higher levels of efficiency within end equipment.
Devices within the TRSxxx65H series are capable of forward DC currents (IF(DC)) up to 12A and square wave non-repetitive surge currents IFSM up to 640A. Seven devices are housed in TO-220-2L packages and the remaining five are provided in compact and flat DFN8×8 SMD packages.
Volume shipments are available now.
Toshiba Electronics Europe offers a variety of hard disk drive (HDD) products as well as semiconductors for automotive, industrial, IoT, motion control, telecomms, networking, consumer and white goods applications. Next to HDDs, the company’s broad portfolio encompasses power semiconductors and other discrete devices ranging from diodes to logic ICs, optical semiconductors as well as microcontrollers and application-specific standard products (ASSPs).
In addition, TEE also offers its SCiB battery cells and modules with lithium titanium oxide (LTO) for heavy-duty applications and Silicon Nitride (SiN) ceramic substrates used in power semiconductor modules, inverters and converters for their heat dissipation characteristics and strength.
TEE has its headquarters in Düsseldorf, Germany, with branch offices in France, Italy, Spain, Sweden and the United Kingdom providing marketing, sales and logistics services.
