SiC FETs are drop-in replacements for silicon super junction MOSFETs
To cut losses in power systems, UnitedSiC has introduced 650V silicon carbide FETs which are drop-in replacements for silicon super junction MOSFETs.
Available in standard TO-220, TO-247 and D2PAK-3L packages, the UJ3C065080T3S SiC FETs operate with standard Si-MOSFET gate drive, eliminating the need to re-design drive circuits. They also offer low RDS(ON) and low gate charge to reduce system losses. They can be used for power factor correction and DC/DC conversion in both hard-switched and ZVS-switched systems, advises UnitedSiC. Applications include electric vehicle (EV) chargers, power supplies, motor drives and renewable energy inverters.
The maximum drain current (ID) ratings for the UJ3C SiC transistors ranges from 31 to 85A. Low RDS(ON), specified at 27milli-ohms, is best in class for TO-220 devices, claims UnitedSiC. An integral low Qrr body diode eliminates the need for an anti-parallel diode. The combination of low RDS(ON), high current rating and thermal performance means that the UJ3C series can be used in hard-switched converters and zero-voltage switching applications such as LLC and phase-shifted full bridge converters. The devices also enable switching frequencies of up to 500kHz, allowing designers to reduce the size and cost of other system components, including bulky inductors, capacitors and thermal management parts.
UnitedSiC’s “Simple Silicon Substitution” technology comprises a patent-pending metal gate SiC JFET co-packaged with a custom designed, ESD protected, low voltage silicon MOSFET. Proprietary die-attach and packaging techniques minimise losses and provide effective thermal management for upgrades in legacy designs.
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