Toshiba launches 650V 3rd generation SiC MOSFETs in compact TOLL package
Toshiba has announced the release of three new 650V silicon carbide (SiC) MOSFETs, which incorporate its latest 3rd generation SiC MOSFET chips. The TW027U65C, TW048U65C, and TW083U65C are housed in a surface-mount TOLL package and are designed to reduce switching losses in industrial equipment. They are suitable for a wide range of demanding power applications, including switched-mode power supplies (SMPS) in servers, data centres and communications equipment, uninterruptible power supplies (UPS), EV charging stations, and power conditioners for photovoltaic (PV) inverters.
Compared to lead-inserted packages, such as the TO-247 and TO-247-4L(X), these new devices significantly reduce volume by more than 80%. This substantial miniaturisation directly contributes to improved equipment power density. Furthermore, the surface mounting capability of the TOLL package allows for the use of smaller parasitic impedance components, including resistors and inductors, which in turn leads to a reduction in switching losses.
The TOLL package is a 9-pin, 4-terminal package designed to facilitate the use of a Kelvin connection for its signal source terminal for the gate drive. This advanced design minimises the influence of inductance in the source wire within the package, thereby achieving high-speed switching performance. For example, the TW048U65C demonstrates a notable reduction in turn-on loss (Eon) of approximately 55% and turn-off loss (Eoff) of around 25% compared to Toshiba’s equivalent product that uses the TO-247 package without a Kelvin connection. This improvement directly contributes to reducing power loss in equipment.
Toshiba’s 3rd generation SiC MOSFETs feature an optimised drift resistance and channel resistance ratio, leading to good temperature dependence of drain-source on-resistance (RDS(on)) across a wide range of operating conditions. They also exhibit low RDS(on) x gate-drain charges (Qgd), a crucial figure of merit (FOM), further enhancing their performance. All variants feature an absolute maximum drain-source voltage (VDSS) of 650V and a wide gate-source voltage (VGSS) range of -10V to 25V, allowing compatibility for various gate drive circuits, simplifying circuit design. The gate threshold voltage (Vth) for these devices typically ranges from 3.0V to 5.0V, which also helps simplify circuit design. Furthermore, the high drain current (ID) rating ensures robust operation under demanding conditions, enhancing system reliability.
