Two SiC MOSFETs from Diodes are automotive-compliant
The wide bandgap portfolio at Diodes has been extended with the addition of two SiC MOSFETS. The DMWSH120H90SM4Q and DMWSH120H28SM4Q have been engineered to enhance automotive subsystems’ efficiency, said the company.
The N-channel MOSFETs respond to the increasing market demand for SiC solutions that enable better efficiency and higher power density in electric vehicle / hybrid electric vehicle (EV / HEV) automotive subsystems such as battery chargers, on-board chargers (OBC), high efficiency DC/DC converters, motor drivers and traction inverters.
The DMWSH120H90SM4Q operates safely and reliably up to 1200VDS with a gate source voltage (Vgs) of +15/-4V and has an RDSon of 75mOhm (typical) at 15Vgs. The SiC MOSFET is designed for OBCs, automotive motor drivers, DC/DC converters in EV/HEV and battery charging systems.
The DMWSH120H28SM4Q operates at up to 1200VDS, +15/-4Vgs, and has a lower RDSon of 20mOhm (typical) at 15Vgs. This MOSFET has been designed for motor drivers, EV traction inverters and DC/DC converters in other EV/HEV subsystems. Low RDSon enables these MOSFETs to run cooler in applications that require high power density, advised Diodes.
Both products have low thermal conductivity (RθJC = 0.6 degrees C per Watt), enabling drain currents up to 40A in the DMWSH120H90SM4Q and 100A in the DMWSH120H28SM4Q. Both MOSFEETs also have fast intrinsic and robust body diodes with low reverse recovery charge (Qrr) of 108.52nC in the DMWSH120H90SM4Q and 317.93nC in the DMWSH120H28SM4Q. This enables them to perform fast switching with reduced power losses.
By using the planar manufacturing process, Diodes said it has created new MOSFETS that offer more robust and reliable performance in automotive applications and with increased drain current, breakdown voltage, junction temperature, and power rings as compared to previously released versions. The devices are available in a TO247-4 (Type WH) package, which offers an additional Kelvin sense pin. This can be connected to the source to optimise switching performance, enabling even higher power densities.
The DMWSH120H90SM4Q and DMWSH120H28SM4Q are AEC-Q101 qualified and available now. They are manufactured in IATF 16949 certified facilities, and support PPAP documentation.
