X-Fab delivers 110nm BCD on SOI technology for digital integration
Analogue/mixed signal foundry, X-Fab Silicon Foundries has announced the XT011, a 110nm bipolar CMOS-DMOS silicon on insulator (BCD on SOI) process technology. Claimed to be the first foundry to produce a 110nm solution, the process will be used to meet the growing need for greater digital integration and processing capabilities within analogue applications, said the foundry.
Bringing together attributes associated with both SOI and DTI (deep trench isolation), it enables high density digital logic and analogue functionality to be more easily incorporated in a single chip compared to traditional bulk BCD.
By moving to a lower process node, XT011 provides double the standard cell library density of X-Fab’s XT018 180nm BCD-on-SOI semiconductor platform. It also takes up 35 per cent less area for SONOS embedded flash implementations. Low on-resistance, high voltage N channel device performance is also enhanced, with a greater than 25 per cent improvement on the XT018 process, reported X-Fab. Another area of improvement is thermal performance which has been enhanced significantly, said X-Fab, which means that high-current applications can be better addressed – matching what would normally be expected of a bulk BCD process.
Enabling the delivery of AEC-Q100 Grade 0 compliant design implementations, the robust BCD on SOI technology has an operating temperature range of -40 to +175 degrees C. Elevated levels of resilience to EMI are exhibited too, added the company, with no parasitic bipolar effects witnessed, eliminating the risk of latch-ups occurring and “assuring the highest degrees of operational reliability”.
A process design kit (PDK) is available together with a broad array of IP elements, such as SRAM, ROM, SONOS-based flash and embedded EEPROM.
The XT011 process is primarily targeted at automotive applications that require an increased level of data processing capabilities. In addition, it will provide a path to a smaller geometry for existing industrial and medical products, said X-Fab.
Devices using the new XT011 110 nm BCD on SOI semiconductor process will be fabricated at X-Fab’s facility in Corbeil-Essonnes, near Paris. Volume production will commence in the second half of 2023
