100V half-bridge MOSFET drivers continue legacy of Harris Intelligent Power devices 

Two 100V half-bridge MOSFET drivers, the HIP221 and HIP2210, extend Renesas Electronics’ legacy Harris Intelligent Power (HIP) devices for use in industrial and consumer applications.

The HIP2211 is a next-generation, pin-compatible upgrade to Renesas’ popular ISL2111 bridge driver and the HIP2210 offers a tri-level PWM input to simplify power supply and motor drive design.

The HIP2211 and HIP2210 are suitable for 48V telecomms power supplies, Class-D audio amplifiers, solar inverters and UPS inverters. They are also rugged enough to power the 48V motor drives found in Li-ion battery-powered household and outdoor products, water pumps, and cooling fans.

The HIP221x drivers are designed to work reliably under difficult operating conditions. They have a high-speed, high-voltage HS pin which tolerates up to -10V continuously and slewing as quickly as 50V/ns. Under-voltage protection works in tandem with the HIP2210’s programmable anti-shoot-through protection to protect against damage from power supply or other external fault conditions.

The HIP221x drivers feature strong 3A source, 4A sink drivers with very fast 15ns typical propagation delay and 2ns typical delay matching. These performance parameters make them particularly suitable for high-frequency switching applications.

Both the HIP2210 and HIP2211 are designed to complement Renesas microcontrollers in advanced DC/DC and brushless motor drive systems.

“The innovative HIP221x devices continue our 25-year heritage of developing . . . Harris Intelligent Power (HIP) half-bridge drivers, said Philip Chesley, vice president, industrial and communications business division at Renesas. “Robust noise tolerance, ultra-fast propagation delays, and high system efficiency are some of the key features our customers have come to rely on from our entire range of HIP half-bridge MOSFET drivers,” he added.

 The HIP2211 and HIP2210 have a 115V DC bootstrap supply maximum voltage (120V HS absolute maximum) to support 100V on the half-bridge. They also have a wide VDD voltage operating range of 6.0 to 18V (20V absolute maximum) and an integrated 0.5Ohm typical bootstrap diode to eliminate external discrete diodes.

Adjustable dead time delay via RDT pin (HIP2210 only) prevents shoot-through conditions, adjustable from 35ns to 350ns with a single resistor.

The HIP2211 and HIP2210 are available now from Renesas’ worldwide distributors. The HIP2211 is supplied in an eight-lead SOIC and a 10-lead 4.0 x 4.0mm TDFN package.

The HIP2210 is supplied in a 10-lead 4.0 x 4.0mm TDFN package.

http://www.renesas.com

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