1200V silicon carbide FETs are upgrade option for IGBT, Si and SiC-MOSFET users
A drop-in replacement without changes to gate drive voltage is offered by UnitedSiC, which has developed the UJ3C1200 series of silicon carbide (SiC) JFET cascodes for upgrading power factor correction (PFC) stages, active front-end rectifiers, LLC converters and phase shift full bridge converters.
The UJ3C1200 series of SiC JFET cascodes have a voltage rating of 1200V and on resistances of 80 and 40mOhm, and are offered by UnitedSiC as a drop-in replacement for many existing IGBT, Si-MOSFET and SiC-MOSFET parts, with no change to gate drive circuitry. This simplifies design upgrades and provides an alternative-purchasing source for existing parts, says UnitedSiC.
The cascodes are expected to be used in on-board electric vehicle (EV) chargers, battery chargers and photo voltaic (PV) inverters where improvements to efficiency and/or power density are required.
Based on UnitedSiC’s Gen 3 SiC transistor technology, the UJ3C1200 series integrates a SiC JFET with a custom-designed Si-MOSFET to combine normally-off operation, high performance body diode and the easy gate drive of the MOSFET, with the efficiency, speed and high temperature rating of the SiC JFET. Existing systems can expect a performance increase with lower conduction and switching losses, enhanced thermal properties and integrated gate ESD protection. In new designs, the UnitedSiC UJ3C1200 series delivers increased switching frequencies for efficiency increases and a reduction in size and cost of passive components, such as magnetics and capacitors.
UnitedSiC will show the 1200 V FETs at PCIM 2018 on the ECOMAL Europe booth, 7-406.
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