1700V SiC Schottky barrier diodes protect data centres and building automation
Silicon carbide (SiC) diodes from Littelfuse have been increased to include 1,700V models. The LSIC2SD170Bxx series SiC Schottky diodes are available in the TO-247-2L package and with a choice of 10, 25 or 50A current ratings.
The SiC diodes offer power electronics system designers performance advantages, including close-to-zero reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 degrees C, said Littelfuse.
They can be used where enhanced efficiency, reliability, and simplified thermal management are required and the fast and low loss switching makes them suitable for data centres, building automation and other high power electronics applications, said the company.
SiC Schottky barrier diodes are suitable for a wide range of AC/DC and DC/DC power converters used in industry, energy generation, and energy distribution / storage. Typical examples include industrial switch mode power supplies, uninterruptable power supplies, battery chargers, solar inverters, industrial motor drives and high speed rectifiers.
“SiC diodes in power designs instead of diodes based on legacy silicon-based technology . . . enable the design of faster switching power electronics in the converters which can then be made more compact at the same output power or pack more power in the same volume,” said Francois Perraud, product marketing manager, SiC Products at Littelfuse.
The LSIC2SD170Bxx SiC Schottky diodes offer positive temperature co-efficient of the forward voltage for safe operation and ease of paralleling, fast, temperature-independent switching and dramatically reduced switching losses compared to silicon bipolar diodes, summarised Littelfuse.
The LSIC2SD170Bxx SiC Schottky diodes are available in the TO-247-2L package. Sample requests can be placed through authorised Littelfuse distributors worldwide.
