200V half-bridge gate driver IC drives motor control for e-bikes

The latest member of the EiceDriver 200V level-shift gate driver family, the IRS2007S half-bridge gate driver IC is supplied in a standard SOIC-8 (DSO-8) package by Infineon.

The IC features under-voltage-lockout (UVLO) for V CC and V BS, and ensures a higher reliability in start-up operations than previous product generations, says Infineon. IRS2007S is tailored for low voltage (24, 36, and 48V) and medium voltage (60, 80, 100, and 120V) motor control applications in battery-driven devices. Example uses are in light electric vehicles, such as e-bikes and e-scooters and drones, as well as power tools and household and garden equipment.

The IRS2007S includes integrated dead-time and shoot-through protection. It also features low quiescent currents, tolerance of negative transient voltage and dV/dt immunity. According to Infineon, the gate driver ensures the device reliability and reduces the bill of materials (BoM). Like the other members of the 200V level-shift gate driver family, the IRS2007S uses Infineon’s high-voltage IC technology to realise a compact, efficient and robust monolithic construction, says the company. A smaller MLPQ 4×4 14L (VQFN-14) package option is also available.

The 200V level-shift gate driver family comprises three-phase, half-bridge, and high and low side gate driver ICs, in both, silicon-on-insulator (SOI) and junction isolation (JI) options. The three-phase gate driver ICs use Infineon’s SOI technology to provide functional isolation with industry-leading negative V S robustness and reduced level shift losses. Additionally, the SOI version has integrated bootstrap diodes (BSD) to further reduce overall cost, simplify layout, and reduce PCB size.

The EiceDriver IRS2007S is available for order now.

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