350V GaN power transistor is “20x smaller than comparable silicon”
EPC2050 GaN power transistors, delivering 350V, 80 mOhm maximum RDS(on) and 26A peak current are offered in a small chip scale package by EPC. The transistors are suitable for multi-level converters, EV charging, solar power inverters, lidar and LED lighting applications.
The EPC2050 measures just 1.95 x 1.95mm, for a device that occupies 10 times less area than comparable silicon solutions.
The small, fast switching, 350V GaN power transistor can be used for DC/DC conversion from or to 120 to 160V, such as in aerospace design. It can also be used for 120 to 150V motor control for medical motors, DC/AC inverters and multi-level converters such as totem pole power factor correction (PFC). Other suitable scenarios are DC/DC conversion of 400V input to 12, 20 or 48V outputs. Additional applications include fast chargers, battery management systems, EV charging, solar power inverters, high power lidar for autonomous cars and delivery vehicles, LED lighting and RF switches, says EPC. They are also suitable for consumer and industrial wirings like wall-mounted sockets and Class D audio.
The EPC2050 can be used for 120V AC-only applications, such as power tools and in-wall powered devices, seat-back airline 120V inverters and commercial LED lighting in the Americas.
EPC has also introduced the EPC90121 development board. This is a 350V maximum device voltage, 4A maximum output current half bridge featuring the EPC2050 and On Semi’s NCP51820 gate driver. The board measures 2.0 x 2.0 inches and contains all critical components, and the layout supports optimal switching performance.
The EPC2050 eGaN FET and the EPC90121 development board are available now from Digi-Key.
