40 V eGaN FET targets high-power density performance
Efficient Power Conversion Corporation has expanded its selection of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2067 (1.3 m-Ohm typical, 40 V) eGaN FET. The EPC2067 suits applications with demanding requirements for high-power density performance, including 48 V to 54 V input servers. Lower gate charges and zero reverse recovery losses enable high-frequency operation of 1 MHz, and beyond, at high efficiency in a tiny 9.3 mm2 footprint.
According to Alex Lidow, EPC’s co-founder and CEO: “The EPC2067 makes the ideal switch for the secondary side of the LLC DC-DC converter from 40 V – 60 V to 12 V. This 40 V device offers improved performance and cost compared with previous-generation 40 V GaN FETs allowing designers to improve efficiency and power density.”
The EPC90138 development board is a 40 V maximum device voltage, 40 A maximum output current, half bridge with onboard gate drives, featuring the EPC2067 eGaN FETs. This 2 in x 2 in (50.8 mm x 50.8 mm) board is designed for optimal switching performance and contains all critical components for easy evaluation of the EPC2067.
Both the EPC2067 and EPC90138 are available to order from Digi-Key.
The EPC2067 eGaN FET is priced at 1K u/reel at $2.69 each, the EPC90138 development board, $123.75 each. Both the EPC2067 and EPC90139 are available for immediate delivery from Digi-Key.
EPC is a leader in enhancement-mode gallium nitride (eGaN) based power management. eGaN FETs and integrated circuits help provide high-quality performance in applications, such as DC-DC converters, remote sensing technology (lidar), motor drives for eMobility, robotics, drones and low-cost satellites.