40V dual MOSFET replaces two discretes in automotive applications

Claimed to be the industry’s first automotive-compliant 40V dual MOSFET in a 3.3 x 3.3mm package, the DMT47M2LDVQ can replace two discrete MOSFETs. This, says Diodes, reduces the board space footprint in many automotive applications, from electric seat control to advanced driver assistance systems (ADAS).
According to Ian Moulding, automotive marketing manager for Diodes, “The DMT47M2LDVQ is an example of how we are helping the automotive industry address the technical and commercial challenges it faces when developing the next generations of vehicles.”

The DMT47M2LDVQ integrates two n-channel enhancement mode MOSFETs with what is claimed to be the industry’s lowest RDS(on) for this configuration; i.e.  10.9mOhm at VGS of 10V and ID of 30.2A. This low on resistance keeps conduction losses to a minimum wireless charging or motor control applications, for example. The typical gate charge of 14.0nC, at a VGS of 10V and ID of 20A, ensures that switching losses are minimised, says Diodes.

The DMT47M2LDVQ’s thermally efficient PowerDI 3333-8 package returns a junction-to-case thermal resistance (Rthjc) of 8.43 degrees C/W. This allows engineers to develop end applications with a higher power density than with MOSFETs packaged individually. This can reduce the PCB area needed for implementing automotive features, including ADAS.

The DMT47M2LDVQ is AEC-Q100 Grade 1-qualified. The MOSFET is available now, with supporting PPAP documentation. It is manufactured in IATF 16949 certified facilities.

Diodes delivers semiconductor products to companies in the consumer electronics, computing, communications, industrial, and automotive markets. Its product portfolio includes discrete, analogue and mixed-signal products and leading-edge packaging technology to meet customers’ needs. The company operates worldwide with 28 sites, including engineering, testing, manufacturing, and customer service.


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