650V SiC Schottky diodes released by Vishay ‘ignore’ temperature variances
10 650V silicon carbide (SiC) Schottky diodes are based on a merged PIN Schottky (MPS) design. They increase the efficiency of high frequency applications by reducing switching losses regardless of the effects from temperature variances, says Vishay Semiconductors, allowing the diodes to operate at higher temperatures.
The MPS design shields the electric field from the Schottky barrier to reduce leakage currents while increasing surge current capability via hole injection. Compared to pure silicon Schottky devices, the diodes handle the same level of current with only a slight increase in forward voltage drop while demonstrating a significantly higher degree of ruggedness, reports Vishay.
The 650V SiC Schottky diodes are intended for power factor correction and output rectification in flyback power supplies and LLC converters for servers, telecomms equipment, uninterrruptible power supplies (UPS) and solar inverters.
The diodes are available with current ratings from 4.0 to 40A in the 2L TO-220AC and TO-247AD 3L packages and offer high temperature operation to +175 degrees C.
Samples and production quantities are available now, with lead times of 10 weeks.
Vishay claims to manufacture one of the world’s largest portfolios of discrete semiconductors and passive electronic components. Its products are used in the automotive, industrial, computing, consumer, telecommunications, military, aerospace and medical markets.