Nexperia boosts wide-bandgap portfolio with 1200 V SiC Schottky diodes
Nexperia has announced the addition of two 1200 V 20 A silicon carbide (SiC) Schottky diodes to its portfolio of power electronics components. The PSC20120J and PSC20120L have been designed to address the demand for ultra-low power loss rectifiers which enable high-efficiency energy conversion in industrial applications. As such they are ideally suited for the power supply units (PSUs) in power-intensive artificial intelligence (AI) server infrastructure, telecommunications equipment and solar inverter applications.
These new Schottky diodes deliver performance through temperature-independent capacitive switching and zero recovery behaviour that delivers figure-of-merit (QC x VF). Furthermore, they exhibit switching performance that is almost entirely independent of current and switching speed variations. The merged PiN Schottky (MPS) structure of these devices provides additional benefits, such as robustness against surge currents as evidenced by their high peak-forward current (IFSM). This feature mitigates the requirement for additional protection circuitry, thereby reducing system complexity and enabling engineers to achieve higher efficiency using smaller form factors in rugged high-voltage applications.
This PSC20120J is encapsulated in a Real-2-Pin D2PAK R2P (TO-263-2) surface-mount device (SMD) power plastic package, while the PSC20120L is housed in a Real-2-Pin TO247 R2P (TO-247-2) through-hole power plastic package. These thermally stable packages enhance device reliability in high-voltage applications at operating temperatures up to 175 °C. Designers can be further reassured by Nexperia’s reputation as a proven manufacturer of high-quality semiconductor products in a range of semiconductor technologies supported by a robust supply chain.
To learn more about Nexperia’s portfolio of SiC Schottky diodes, visit: http://www.nexperia.com/sic-diodes
